Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba<sup>+</sup> Ions in Si

Gunel Imanova; Ilkhom Bekpulatov

doi:doi:10.11648/j.nano.20210904.11

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Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba⁺ Ions in Si

Gunel Imanova, Ilkhom Bekpulatov

Published in American Journal of Nano Research and Applications (Volume 9, Issue 4)

Received: 14 February 2022 Accepted: 2 March 2022 Published: 9 March 2022

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Abstract

The processes of formation of nanoscale silicide films during the implantation of Ba⁺ ions into Si (111) and Si (100) and subsequent thermal annealing were studied by electron spectroscopy. It is shown that implantation of ions with a high dose D > 10¹⁶ cm^-2 and short-term heating leads to the formation of thin films of barium monosilicide with new surface superstructures. The optimal modes of formation and band-energy parameters of BaSi films obtained by low-energy high-dose implantation of barium ions in Si are determined. It is shown that BaSi films are a narrow-gap semiconductor with a band gap of 0.7 eV and have good emission and thermoelectric properties corresponding to the solar spectrum and have high photoelectric and thermoelectric characteristics. It should be noted that, in addition to the formation of a chemical compound, the narrowing of the Si band gap upon implantation of large doses of Ba⁺ ions also contributes to defects formed as a result of strong disordering of the crystal lattice.

Published in	American Journal of Nano Research and Applications (Volume 9, Issue 4)
DOI	10.11648/j.nano.20210904.11
Page(s)	32-35
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Low-Energy High-Dose Ion Implantation, Films of Barium Monosilicide, Optimal Modes of Film Formation, Energy-Band Parameters

References

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APA Style

Gunel Imanova, Ilkhom Bekpulatov. (2022). Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba+ Ions in Si. American Journal of Nano Research and Applications, 9(4), 32-35. https://doi.org/10.11648/j.nano.20210904.11

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ACS Style

Gunel Imanova; Ilkhom Bekpulatov. Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba+ Ions in Si. Am. J. Nano Res. Appl. 2022, 9(4), 32-35. doi: 10.11648/j.nano.20210904.11

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AMA Style

Gunel Imanova, Ilkhom Bekpulatov. Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba+ Ions in Si. Am J Nano Res Appl. 2022;9(4):32-35. doi: 10.11648/j.nano.20210904.11

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@article{10.11648/j.nano.20210904.11,
  author = {Gunel Imanova and Ilkhom Bekpulatov},
  title = {Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba+ Ions in Si},
  journal = {American Journal of Nano Research and Applications},
  volume = {9},
  number = {4},
  pages = {32-35},
  doi = {10.11648/j.nano.20210904.11},
  url = {https://doi.org/10.11648/j.nano.20210904.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nano.20210904.11},
  abstract = {The processes of formation of nanoscale silicide films during the implantation of Ba+ ions into Si (111) and Si (100) and subsequent thermal annealing were studied by electron spectroscopy. It is shown that implantation of ions with a high dose D > 1016 cm-2 and short-term heating leads to the formation of thin films of barium monosilicide with new surface superstructures. The optimal modes of formation and band-energy parameters of BaSi films obtained by low-energy high-dose implantation of barium ions in Si are determined. It is shown that BaSi films are a narrow-gap semiconductor with a band gap of 0.7 eV and have good emission and thermoelectric properties corresponding to the solar spectrum and have high photoelectric and thermoelectric characteristics. It should be noted that, in addition to the formation of a chemical compound, the narrowing of the Si band gap upon implantation of large doses of Ba+ ions also contributes to defects formed as a result of strong disordering of the crystal lattice.},
 year = {2022}
}

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TY  - JOUR
T1  - Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba+ Ions in Si
AU  - Gunel Imanova
AU  - Ilkhom Bekpulatov
Y1  - 2022/03/09
PY  - 2022
N1  - https://doi.org/10.11648/j.nano.20210904.11
DO  - 10.11648/j.nano.20210904.11
T2  - American Journal of Nano Research and Applications
JF  - American Journal of Nano Research and Applications
JO  - American Journal of Nano Research and Applications
SP  - 32
EP  - 35
PB  - Science Publishing Group
SN  - 2575-3738
UR  - https://doi.org/10.11648/j.nano.20210904.11
AB  - The processes of formation of nanoscale silicide films during the implantation of Ba+ ions into Si (111) and Si (100) and subsequent thermal annealing were studied by electron spectroscopy. It is shown that implantation of ions with a high dose D > 1016 cm-2 and short-term heating leads to the formation of thin films of barium monosilicide with new surface superstructures. The optimal modes of formation and band-energy parameters of BaSi films obtained by low-energy high-dose implantation of barium ions in Si are determined. It is shown that BaSi films are a narrow-gap semiconductor with a band gap of 0.7 eV and have good emission and thermoelectric properties corresponding to the solar spectrum and have high photoelectric and thermoelectric characteristics. It should be noted that, in addition to the formation of a chemical compound, the narrowing of the Si band gap upon implantation of large doses of Ba+ ions also contributes to defects formed as a result of strong disordering of the crystal lattice.
VL  - 9
IS  - 4
ER  -

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Author Information

Gunel Imanova

Department of Physical, Mathematical and Technical Sciences, Azerbaijan National Academy of Sciences, Institute of Radiation Problems, Baku, Azerbaijan
Ilkhom Bekpulatov

Tashkent State Technical University, Tashkent, Uzbekistan

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Plain Text BibTeX RIS

APA Style

Gunel Imanova, Ilkhom Bekpulatov. (2022). Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba+ Ions in Si. American Journal of Nano Research and Applications, 9(4), 32-35. https://doi.org/10.11648/j.nano.20210904.11

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ACS Style

Gunel Imanova; Ilkhom Bekpulatov. Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba+ Ions in Si. Am. J. Nano Res. Appl. 2022, 9(4), 32-35. doi: 10.11648/j.nano.20210904.11

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AMA Style

Gunel Imanova, Ilkhom Bekpulatov. Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba+ Ions in Si. Am J Nano Res Appl. 2022;9(4):32-35. doi: 10.11648/j.nano.20210904.11

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@article{10.11648/j.nano.20210904.11,
  author = {Gunel Imanova and Ilkhom Bekpulatov},
  title = {Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba+ Ions in Si},
  journal = {American Journal of Nano Research and Applications},
  volume = {9},
  number = {4},
  pages = {32-35},
  doi = {10.11648/j.nano.20210904.11},
  url = {https://doi.org/10.11648/j.nano.20210904.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nano.20210904.11},
  abstract = {The processes of formation of nanoscale silicide films during the implantation of Ba+ ions into Si (111) and Si (100) and subsequent thermal annealing were studied by electron spectroscopy. It is shown that implantation of ions with a high dose D > 1016 cm-2 and short-term heating leads to the formation of thin films of barium monosilicide with new surface superstructures. The optimal modes of formation and band-energy parameters of BaSi films obtained by low-energy high-dose implantation of barium ions in Si are determined. It is shown that BaSi films are a narrow-gap semiconductor with a band gap of 0.7 eV and have good emission and thermoelectric properties corresponding to the solar spectrum and have high photoelectric and thermoelectric characteristics. It should be noted that, in addition to the formation of a chemical compound, the narrowing of the Si band gap upon implantation of large doses of Ba+ ions also contributes to defects formed as a result of strong disordering of the crystal lattice.},
 year = {2022}
}

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TY  - JOUR
T1  - Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba+ Ions in Si
AU  - Gunel Imanova
AU  - Ilkhom Bekpulatov
Y1  - 2022/03/09
PY  - 2022
N1  - https://doi.org/10.11648/j.nano.20210904.11
DO  - 10.11648/j.nano.20210904.11
T2  - American Journal of Nano Research and Applications
JF  - American Journal of Nano Research and Applications
JO  - American Journal of Nano Research and Applications
SP  - 32
EP  - 35
PB  - Science Publishing Group
SN  - 2575-3738
UR  - https://doi.org/10.11648/j.nano.20210904.11
AB  - The processes of formation of nanoscale silicide films during the implantation of Ba+ ions into Si (111) and Si (100) and subsequent thermal annealing were studied by electron spectroscopy. It is shown that implantation of ions with a high dose D > 1016 cm-2 and short-term heating leads to the formation of thin films of barium monosilicide with new surface superstructures. The optimal modes of formation and band-energy parameters of BaSi films obtained by low-energy high-dose implantation of barium ions in Si are determined. It is shown that BaSi films are a narrow-gap semiconductor with a band gap of 0.7 eV and have good emission and thermoelectric properties corresponding to the solar spectrum and have high photoelectric and thermoelectric characteristics. It should be noted that, in addition to the formation of a chemical compound, the narrowing of the Si band gap upon implantation of large doses of Ba+ ions also contributes to defects formed as a result of strong disordering of the crystal lattice.
VL  - 9
IS  - 4
ER  -

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