In the field of energy transformation, the share of renewable energies continues to grow and gives hope to fight against global warming. In the global electricity mix we have: 15% for hydropower, and 14.5% for other renewables, according to 2022 figures. Among renewable energies, photovoltaic (PV) solar energy is the most promising with very high record yields of around 29% theoretically, 27.3% experimentally for record-breaking PV solar cells in the laboratory and 22% in industrial production for a solar panel. The selenide, gallium, indium and copper (CIGS) sector is very promising, one of its major advantages coming that the fact the quaternary alloy Cu(In,Ga)Se2 is a material with an adjustable bandgap (Eg). The freely available and highly stable one-dimensional solar cell capacities simulation software, is the tool used for the simulation. Digital simulation is an essential tool because it makes it possible to predict the behavior of the solar device and to be able to estimate its performances. The study of effects of the thickness (WCIGS) and the gap of the CIGS absorber with a cadmium sulfide buffer layer of 30 nm shows that current-voltage density characteristic is enormously affected for WCIGS ≤1000 nm. We therefore note a significant decrease in the values of the short-circuit current density (JSC) and the open-circuit voltage (VOC) when WCIGS decreases. These results are explained by a significant reduction in the quantity of incident photons absorbed and an increase in the recombination rate of the charge carriers photogenerated in the absorber. VOC increases and JSC decreases with the increasing of the absorber gap, the increase in VOC is therefore linked to a significant reduction in the recombination rate at the CIGS/Mo interface and inside the space charge region. The maximum efficiency is 26.33% for Eg = 1.45 eV and WCIGS = 3000 nm.
| Published in | American Journal of Energy Engineering (Volume 14, Issue 1) |
| DOI | 10.11648/j.ajee.20261401.11 |
| Page(s) | 1-8 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2026. Published by Science Publishing Group |
Numerical Simulation, Quaternary Thin Film Solar, Cu(In, Ga)Se2 Absorber, Thickness, Bandgap, Electricals Parameters
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APA Style
Oubda, D., Kabre, S., Diasso, A., Ouedraogo, B., Kebre, M. B., et al. (2026). Simulation of the Effects of the Thickness and the Bandgap of the Absorber on the Performance of the Quaternary Thin Film Solar Cell Based on Cu(In,Ga)Se2. American Journal of Energy Engineering, 14(1), 1-8. https://doi.org/10.11648/j.ajee.20261401.11
ACS Style
Oubda, D.; Kabre, S.; Diasso, A.; Ouedraogo, B.; Kebre, M. B., et al. Simulation of the Effects of the Thickness and the Bandgap of the Absorber on the Performance of the Quaternary Thin Film Solar Cell Based on Cu(In,Ga)Se2. Am. J. Energy Eng. 2026, 14(1), 1-8. doi: 10.11648/j.ajee.20261401.11
AMA Style
Oubda D, Kabre S, Diasso A, Ouedraogo B, Kebre MB, et al. Simulation of the Effects of the Thickness and the Bandgap of the Absorber on the Performance of the Quaternary Thin Film Solar Cell Based on Cu(In,Ga)Se2. Am J Energy Eng. 2026;14(1):1-8. doi: 10.11648/j.ajee.20261401.11
@article{10.11648/j.ajee.20261401.11,
author = {Daouda Oubda and Sayouba Kabre and Alain Diasso and Boureima Ouedraogo and Marcel Bawindsom Kebre and Soumaila Ouedraogo and Boureima Traore Issaka Sankara and Adama Zongo and Amidou Barry and Boureima Sawadogo and Pindewinde Sawadogo and François Zougmore},
title = {Simulation of the Effects of the Thickness and the Bandgap of the Absorber on the Performance of the Quaternary Thin Film Solar Cell Based on Cu(In,Ga)Se2},
journal = {American Journal of Energy Engineering},
volume = {14},
number = {1},
pages = {1-8},
doi = {10.11648/j.ajee.20261401.11},
url = {https://doi.org/10.11648/j.ajee.20261401.11},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajee.20261401.11},
abstract = {In the field of energy transformation, the share of renewable energies continues to grow and gives hope to fight against global warming. In the global electricity mix we have: 15% for hydropower, and 14.5% for other renewables, according to 2022 figures. Among renewable energies, photovoltaic (PV) solar energy is the most promising with very high record yields of around 29% theoretically, 27.3% experimentally for record-breaking PV solar cells in the laboratory and 22% in industrial production for a solar panel. The selenide, gallium, indium and copper (CIGS) sector is very promising, one of its major advantages coming that the fact the quaternary alloy Cu(In,Ga)Se2 is a material with an adjustable bandgap (Eg). The freely available and highly stable one-dimensional solar cell capacities simulation software, is the tool used for the simulation. Digital simulation is an essential tool because it makes it possible to predict the behavior of the solar device and to be able to estimate its performances. The study of effects of the thickness (WCIGS) and the gap of the CIGS absorber with a cadmium sulfide buffer layer of 30 nm shows that current-voltage density characteristic is enormously affected for WCIGS ≤1000 nm. We therefore note a significant decrease in the values of the short-circuit current density (JSC) and the open-circuit voltage (VOC) when WCIGS decreases. These results are explained by a significant reduction in the quantity of incident photons absorbed and an increase in the recombination rate of the charge carriers photogenerated in the absorber. VOC increases and JSC decreases with the increasing of the absorber gap, the increase in VOC is therefore linked to a significant reduction in the recombination rate at the CIGS/Mo interface and inside the space charge region. The maximum efficiency is 26.33% for Eg = 1.45 eV and WCIGS = 3000 nm.},
year = {2026}
}
TY - JOUR T1 - Simulation of the Effects of the Thickness and the Bandgap of the Absorber on the Performance of the Quaternary Thin Film Solar Cell Based on Cu(In,Ga)Se2 AU - Daouda Oubda AU - Sayouba Kabre AU - Alain Diasso AU - Boureima Ouedraogo AU - Marcel Bawindsom Kebre AU - Soumaila Ouedraogo AU - Boureima Traore Issaka Sankara AU - Adama Zongo AU - Amidou Barry AU - Boureima Sawadogo AU - Pindewinde Sawadogo AU - François Zougmore Y1 - 2026/01/29 PY - 2026 N1 - https://doi.org/10.11648/j.ajee.20261401.11 DO - 10.11648/j.ajee.20261401.11 T2 - American Journal of Energy Engineering JF - American Journal of Energy Engineering JO - American Journal of Energy Engineering SP - 1 EP - 8 PB - Science Publishing Group SN - 2329-163X UR - https://doi.org/10.11648/j.ajee.20261401.11 AB - In the field of energy transformation, the share of renewable energies continues to grow and gives hope to fight against global warming. In the global electricity mix we have: 15% for hydropower, and 14.5% for other renewables, according to 2022 figures. Among renewable energies, photovoltaic (PV) solar energy is the most promising with very high record yields of around 29% theoretically, 27.3% experimentally for record-breaking PV solar cells in the laboratory and 22% in industrial production for a solar panel. The selenide, gallium, indium and copper (CIGS) sector is very promising, one of its major advantages coming that the fact the quaternary alloy Cu(In,Ga)Se2 is a material with an adjustable bandgap (Eg). The freely available and highly stable one-dimensional solar cell capacities simulation software, is the tool used for the simulation. Digital simulation is an essential tool because it makes it possible to predict the behavior of the solar device and to be able to estimate its performances. The study of effects of the thickness (WCIGS) and the gap of the CIGS absorber with a cadmium sulfide buffer layer of 30 nm shows that current-voltage density characteristic is enormously affected for WCIGS ≤1000 nm. We therefore note a significant decrease in the values of the short-circuit current density (JSC) and the open-circuit voltage (VOC) when WCIGS decreases. These results are explained by a significant reduction in the quantity of incident photons absorbed and an increase in the recombination rate of the charge carriers photogenerated in the absorber. VOC increases and JSC decreases with the increasing of the absorber gap, the increase in VOC is therefore linked to a significant reduction in the recombination rate at the CIGS/Mo interface and inside the space charge region. The maximum efficiency is 26.33% for Eg = 1.45 eV and WCIGS = 3000 nm. VL - 14 IS - 1 ER -